 |
Zakładka z wyszukiwarką danych komponentów |
|
|
Zakładka z wyszukiwarką danych komponentów |
|
MC100EP58DG Arkusz danych(PDF) 6 Page - ON Semiconductor |
|
||||||||||||||||||||||||||||||
MC100EP58DG Arkusz danych(HTML) 6 Page - ON Semiconductor |
|
|
6 / 10 page  MC10EP58, MC100EP58 www.onsemi.com 6 Table 10. 100EP DC CHARACTERISTICS, NECL (VCC = 0 V, VEE = −5.5 V to −3.0 V (Note 1)) −40°C 25°C 85°C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current 20 28 37 20 31 39 25 33 42 mA VOH Output HIGH Voltage (Note 2) −1145 −1020 −895 −1145 −1020 −895 −1145 −1020 −895 mV VOL Output LOW Voltage (Note 2) −1945 −1820 −1695 −1945 −1820 −1695 −1945 −1820 −1695 mV VIH Input HIGH Voltage (Single-Ended) −1225 −880 −1225 −880 −1225 −880 mV VIL Input LOW Voltage (Single-Ended) −1945 −1625 −1945 −1625 −1945 −1625 mV IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. 2. All loading with 50 W to VCC − 2.0 V. Table 11. AC CHARACTERISTICS (VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 1)) −40°C 25°C 85°C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit fmax Maximum Frequency (See Figure 2. Fmax/JITTER) > 3 > 3 > 3 GHz tPLH, tPHL Propagation Delay to Output Differential D to Q,Q SEL to Q,Q 200 280 380 210 310 410 220 340 420 ps tJITTER Cycle-to-Cycle Jitter (See Figure 2. Fmax/JITTER) 0.2 < 2 0.2 < 2 0.2 < 2 ps VPP Input Voltage Swing (Differential Configuration) 150 800 1200 150 800 1200 150 800 1200 mV tr tf Output Rise/Fall Times Q, Q (20% − 80%) 70 120 170 80 130 180 100 150 200 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC − 2.0 V. |
Podobny numer części - MC100EP58DG |
|
Podobny opis - MC100EP58DG |
|
|
|
Link URL |
| Polityka prywatności |
| ALLDATASHEET.PL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Polish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
