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IRLI530N Arkusz danych(PDF) 2 Page - International Rectifier

Numer części IRLI530N
Szczegółowy opis  HEXFET Power MOSFET
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRLI530N Arkusz danych(HTML) 2 Page - International Rectifier

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IRLI530N
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.122 –––
V/°C
Reference to 25°C, ID = 1mA
†
–––
––– 0.100
VGS = 10V, ID = 9.0A
„
–––
––– 0.120
VGS = 5.0V, ID = 9.0A
„
–––
––– 0.150
VGS = 4.0V, ID = 8.0A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
7.7
–––
–––
S
VDS = 50V, ID = 9.0A
†
–––
–––
25
µA
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -16V
Qg
Total Gate Charge
–––
–––
34
ID = 9.0A
Qgs
Gate-to-Source Charge
–––
–––
4.8
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
20
VGS = 5.0V, See Fig. 6 and 13
„†
td(on)
Turn-On Delay Time
–––
7.2
–––
VDD = 50V
tr
Rise Time
–––
53
–––
ns
ID = 9.0A
td(off)
Turn-Off Delay Time
–––
30
–––
RG = 6.0Ω, VGS = 5.0V
tf
Fall Time
–––
26
–––
RD = 5.5Ω, See Fig. 10
„†
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
800
–––
VGS = 0V
Coss
Output Capacitance
–––
160
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
90
–––
ƒ = 1.0MHz, See Fig. 5
†
C
Drain to Sink Capacitance
–––
12
–––
ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
S
D
G
LD
Internal Drain Inductance
–––
4.5
–––
LS
Internal Source Inductance
–––
7.5
–––
RDS(on)
Static Drain-to-Source On-Resistance
nH
pF
S
D
G
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 3.1mH
RG = 25Ω, IAS = 9.0A. (See Figure 12)
… t=60s, ƒ=60Hz
ƒ ISD ≤ 9.0A, di/dt ≤ 540A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
† Uses IRL530N data and test conditions
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
†
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 6.6A, VGS = 0V
„
trr
Reverse Recovery Time
–––
140
210
ns
TJ = 25°C, IF = 9.0A
Qrr
Reverse RecoveryCharge
–––
740 1100
nC
di/dt = 100A/µs
„†
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
12
60


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