MC100EP91

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4

Table 3. MAXIMUM RATINGS

Symbol

Parameter

Condition 1

Condition 2

Rating

Unit

Positive Power Supply

GND = 0 V

3.8 to 0

V

Negative Power Supply

GND = 0 V

−6

V

Positive Input Voltage

GND = 0 V

3.8 to 0

V

Operating Voltage

GND = 0 V

9.8

V

Output Current

Continuous

Surge

50

100

mA

±0.5

mA

Operating Temperature Range

−40 to +85

°C

Storage Temperature Range

−65 to +150

°C

Thermal Resistance (Junction-to-Ambient)

JESD 51−3 (1S-Single Layer Test Board)

0 lfpm

500 lfpm

SOIC−20 WB

SOIC−20 WB

90

60

°C/W

Thermal Resistance (Junction-to-Ambient)

JESD 51−6 (2S2P Multilayer Test Board) with Filled Thermal Vias

0 lfpm

500 lfpm

QFN−24

QFN−24

37

32

°C/W

Thermal Resistance (Junction-to-Case)

Standard Board

SOIC−20 WB

QFN−24

30 to 35

11

°C/W

Wave Solder (Pb-Free)

225

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

Symbol

Characteristic

−40°C

25°C

85°C

Unit

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Positive Power Supply Current

10

14

20

10

14

20

10

14

20

mA

Input HIGH Voltage (Single-Ended)

1335

1335

1335

mV

Input LOW Voltage (Single-Ended)

GND

875

GND

875

GND

875

mV

(Differential Configuration) (Note 2)

0

2.5

0

2.5

0

2.5

V

150

150

150

mA

D

D

0.5

−150

0.5

−150

0.5

−150

mA

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.