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MC100EPT26DG Arkusz danych(PDF) 4 Page - ON Semiconductor

Numer części MC100EPT26DG
Szczegółowy opis  3.3V 1:2 Fanout Differential LVPECL/LVDS to LVTTL Translator
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC100EPT26DG Arkusz danych(HTML) 4 Page - ON Semiconductor

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Table 5. TTL OUTPUT DC CHARACTERISTICS (VCC = 3.3 V; GND = 0.0 V; TA = −40°C to 85°C)
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
VOH
Output HIGH Voltage
IOH = −3.0 mA
2.4
V
VOL
Output LOW Voltage
IOL = 24 mA
0.5
V
ICCH
Power Supply Current
10
25
35
mA
ICCL
Power Supply Current
15
34
40
mA
IOS
Output Short Circuit Current
−50
−150
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 6. AC CHARACTERISTICS (VCC = 3.0 V to 3.6 V; GND = 0.0 V (Note 1))
Symbol
Characteristic
−40°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
fmax
Maximum Frequency (Figure 2)
275
350
275
350
275
350
MHz
tPLH,
tPHL
Propagation Delay to
Output Differential (Note 2)
1.2
1.2
1.5
1.5
2.0
1.8
1.2
1.2
1.5
1.5
2.0
1.8
1.3
1.2
1.7
1.5
2.2
1.8
ns
tSK+ +
tSK− −
tSKPP
Within Device Skew + +
Within Device Skew − −
Device-to-Device Skew (Note 3)
15
20
100
60
85
500
15
20
100
60
85
500
20
30
100
85
85
500
ps
tJITTER
Random Clock Jitter (RMS) (Figure 2)
@ ≤ 200 MHz
@ > 200 MHz
6
20
30
275
6
40
30
275
6
170
30
275
ps
VPP
Input Voltage Swing (Differential Configuration)
150
800
1200
150
800
1200
150
800
1200
mV
tr
tf
Output Rise/Fall Times
(0.8 V−2.0 V)
Q, Q
330
600
950
330
600
950
330
650
950
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
1. Measured with a 750 mV 50% duty-cycle clock source. RL = 500 W to GND and CL = 20 pF to GND. Refer to Figure 3.
2. Reference (VCC = 3.3 V ± 5%; GND = 0 V)
3. Skews are measured between outputs under identical transitions.
Figure 2. Typical VOH / Jitter versus Frequency (255C)
FREQUENCY (MHz)
0.0
1.0
2.0
3.0
VOH
VOL  0.5 V
JITTER
12
8
4
0
0
100
200
300


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ON Semiconductor		 MC100EPT26DG ONSEMI-MC100EPT26DG Datasheet
134Kb / 9P		    3.3V 1:2 Fanout Differential LVPECL/LVDS to LVTTL Translator
November, 2006 ??Rev. 14
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