2SA1593 datasheet(2/3 Pages) ISC

Numer części	2SA1593

Szczegółowy opis	isc Silicon PNP Power Transistor

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isc Silicon PNP Power Transistor

2SA1593

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1.0A; IB= -0.1A

-0.6

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -1.0A; IB= -0.1A

-1.2

V

V(BR)CEO

Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0

-100

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -10uA; IC= 0

-6

V

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

-100

nA

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

-100

nA

hFE

DC Current Gain

IC= -0.1A; VCE= -5V

100

400

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1.0MHz

25

pF

fT

Current-Gain—Bandwidth Product

IC= -0.1mA; VCE= -10V

120

MHz



hFE Classifications

R

S

T

100-200

140-280 200-400

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