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SI4554DY Arkusz danych(PDF) 5 Page - Vishay Siliconix |
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SI4554DY Arkusz danych(HTML) 5 Page - Vishay Siliconix |
5 / 14 page Document Number: 63660 S11-2527-Rev. A, 26-Dec-11 www.vishay.com 5 Vishay Siliconix Si4554DY This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0.7 1 1.3 1.6 1.9 - 50 - 25 0 50 25 75 100 125 150 T J - Temperature (°C) I D = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 6.8 A 0 12 24 36 48 60 0 1 1 1 0 0 . 00.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by R DS(on)* 1 ms T A = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 1 s DC 10 s |
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