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TP2635N3-GP002 Arkusz danych(PDF) 1 Page - Supertex, Inc |
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TP2635N3-GP002 Arkusz danych(HTML) 1 Page - Supertex, Inc |
1 / 5 page Supertex inc. Supertex inc. www.supertex.com Doc.# DSFP-TP2635 B081613 TP2635 YY = Year Sealed WW = Week Sealed = “Green” Packaging SiTP 2 635 YYWW Features ► Low threshold (-2.0V max.) ► High input impedance ► Low input capacitance ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage Applications ► Logic level interfaces - ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. P-Channel Enhancement-Mode Vertical DMOS FET Absolute Maximum Ratings Parameter Value Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Pin Configuration TO-92 GATE SOURCE DRAIN TO-92 Product Marking Package may or may not include the following marks: Si or Ordering Information Part Number Package Option Packing TP2635N3-G 3-Lead TO-92 1000/Bag TP2635N3-G P002 3-Lead TO-92 2000/Reel TP2635N3-G P003 TP2635N3-G P005 TP2635N3-G P013 TP2635N3-G P014 Product Summary BV DSS/BVDGS R DS(ON) (max) I D(ON) (min) V GS(th) (max) -350V 15Ω -2.0A -0.7V -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Typical Thermal Resistance Package θ ja TO-92 132OC/W |
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