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4N26 Arkusz danych(PDF) 1 Page - American Microsemiconductor

Numer części 4N26
Szczegółowy opis  6-Pin DIP Optoisolators Transistor Output
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Producent  AMMSEMI [American Microsemiconductor]
Strona internetowa  http://www.americanmicrosemi.com/
Logo AMMSEMI - American Microsemiconductor

4N26 Arkusz danych(HTML) 1 Page - American Microsemiconductor

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The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon phototransistor
detector.
Most Economical Optoisolator Choice for Medium Speed, Switching Applications
Meets or Exceeds All JEDEC Registered Specifications
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
I/O Interfacing
Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
VR
3
Volts
Forward Current — Continuous
IF
60
mA
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
PD
120
1.41
mW
mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
VCEO
30
Volts
Emitter–Collector Voltage
VECO
7
Volts
Collector–Base Voltage
VCBO
70
Volts
Collector Current — Continuous
IC
150
mA
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
PD
150
1.76
mW
mW/°C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD
250
2.94
mW
mW/°C
Ambient Operating Temperature Range
TA
–55 to +100
°
C
Storage Temperature Range
Tstg
–55 to +150
°
C
Soldering Temperature (10 sec, 1/16ʺ from case)
TL
260
°
C
Order this document
by 4N25/D
SCHEMATIC
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
1
2
3
6
5
4
STANDARD THRU HOLE
6 1
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
4N25
4N26
4N27
4N28


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