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4N26 Arkusz danych(PDF) 1 Page - American Microsemiconductor |
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4N26 Arkusz danych(HTML) 1 Page - American Microsemiconductor |
1 / 6 page The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specifications Applications • General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • I/O Interfacing • Solid State Relays MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit INPUT LED Reverse Voltage VR 3 Volts Forward Current — Continuous IF 60 mA LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C PD 120 1.41 mW mW/°C OUTPUT TRANSISTOR Collector–Emitter Voltage VCEO 30 Volts Emitter–Collector Voltage VECO 7 Volts Collector–Base Voltage VCBO 70 Volts Collector Current — Continuous IC 150 mA Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C PD 150 1.76 mW mW/°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) VISO 7500 Vac(pk) Total Device Power Dissipation @ TA = 25°C Derate above 25°C PD 250 2.94 mW mW/°C Ambient Operating Temperature Range TA –55 to +100 ° C Storage Temperature Range Tstg –55 to +150 ° C Soldering Temperature (10 sec, 1/16ʺ from case) TL 260 ° C Order this document by 4N25/D SCHEMATIC PIN 1. LED ANODE 2. LED CATHODE 3. N.C. 4. EMITTER 5. COLLECTOR 6. BASE 1 2 3 6 5 4 STANDARD THRU HOLE 6 1 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 4N25 4N26 4N27 4N28 |
Podobny numer części - 4N26 |
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Podobny opis - 4N26 |
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