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SD103AWS Arkusz danych(PDF) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd

Numer części SD103AWS
Szczegółowy opis  PN Junction Guard Ring Transient and ESD Protection
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Producent  SMC [Sangdest Microelectronic (Nanjing) Co., Ltd]
Strona internetowa  http://www.smc-diodes.com/
Logo SMC - Sangdest Microelectronic (Nanjing) Co., Ltd

SD103AWS Arkusz danych(HTML) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd

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Technical Data
Green Products
Data Sheet N0929, Rev. A
• China - Germany - Korea - Singapore - United States •
• http://www.smc-diodes.com - sales@ smc-diodes.com •
SD103AWS-SD103CWS
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SD103AWS SD103BWS SD103CWS Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
30
20
V
RMS Reverse Voltage
VR(RMS)
28
21
14
V
Forward Continuous Current
IFM
0.35
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
2
A
Power Dissipation
Pd
200
mW
Typical Thermal Resistance Junction to Ambient
RθJA
500
°C/W
Junction Temperature Range
TJ
125
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage
V(BR)
40
-
-
V
IR=100μA SD103AWS
30
IR=100μA SD103BWS
20
IR=100μA SD103CWS
Forward Voltage
VFM
-
-
0.37
V
IF=20mA
-
-
0.60
V
IF=200mA
Reverse Leakage Current
IRM
-
-
5
μA
VR=30V SD103AWS
-
-
VR=20V SD103BWS
-
-
VR=10V SD103CWS
Capacitance between terminals
CT
-
-
50
pF VR=0V,f=1.0MHz
Reverse recovery time
trr
-
10
-
ns IF= IR=200mA,
Irr=0.1×IR, RL=100Ω


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