SI4974DY datasheet(3/9 Pages) VISHAY

Numer części	SI4974DY

Szczegółowy opis	Dual N-Channel 30-V (D-S) MOSFET

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Producent	VISHAY [Vishay Siliconix]

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Document Number: 73052

S09-0228-Rev. D, 09-Feb-09

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3

Vishay Siliconix

Si4974DY

CHANNEL-1 TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

5

10

15

20

25

30

35

40

0

1234

5

VGS = 10 V thru 5 V

4 V

VDS - Drain-to-Source Voltage (V)

0.00

0.01

0.02

0.03

0.04

0.05

0

5

10

15

20

25

30

35

40

I - Drain Current (A)

D

VGS = 4.5 V

VGS = 10 V

0

1

2

3

4

5

6

0

2468

10

VDS = 15 V

ID = 8 A

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

5

10

15

20

25

30

35

40

0

123

456

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

0

200

400

600

800

1000

1200

0

5

10

15

20

25

30

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 8 A

TJ - Junction Temperature (°C)

Podobny numer części - SI4974DY

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Vishay Siliconix	SI4974DY	117Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI4974DY	117Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET 01-Jan-2022

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