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SI7983DP Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI7983DP Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number: 72637 S09-0272-Rev. B, 16-Feb-09 Vishay Siliconix Si7983DP Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 600 µA - 0.40 - 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS ≥ - 5 V, VGS = - 4.5 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 12 A 0.014 0.017 Ω VGS = - 2.5 V, ID = - 11 A 0.016 0.020 VGS = - 1.8 V, ID = - 4.1 A 0.020 0.024 Forward Transconductancea gfs VDS = - 15 V, ID = - 12 A 41 S Diode Forward Voltagea VSD IS = - 2.9 A, VGS = 0 V - 0.8 - 1.2 V Dynamicb Total Gate Charge Qg VDS = - 10 V, VGS = - 4.5 V, ID = - 12 A 49 74 nC Gate-Source Charge Qgs 7.2 Gate-Drain Charge Qgd 12.1 Gate Resistance Rg f = 1 MHz 8 Ω Turn-On Delay Time td(on) VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω 35 55 ns Rise Time tr 60 90 Turn-Off Delay Time td(off) 390 585 Fall Time tf 190 285 Source-Drain Reverse Recovery Time trr IF = - 2.9 A, dI/dt = 100 A/µs 106 160 Output Characteristics 0 5 10 15 20 25 30 0 1234 5 VGS = 5 thru 2 V 1 V 1.5 V VDS - Drain-to-Source Voltage (V) Transfer Characteristics 0 5 10 15 20 25 30 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) |
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