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IRFB38N20DPBF Arkusz danych(PDF) 2 Page - Infineon Technologies AG

Numer części IRFB38N20DPBF
Szczegółowy opis  HEXFET짰 Power MOSFET
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Producent  INFINEON [Infineon Technologies AG]
Strona internetowa  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

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IRFB/S/SL38N20DPbF
2
2016-5-31
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
starting TJ = 25°C, L = 1.3mH, RG = 25, IAS = 26A.
ISD 26A, di/dt 390A/µs, VDD V(BR)DSS, TJ  175°C.
Pulse width
300µs; duty cycle  2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
This is only applied to TO-220AB package.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.22
–––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.054
 VGS = 10V, ID = 26A 
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
25
µA
VDS =200 V, VGS = 0V
–––
–––
250
VDS = 160V,VGS = 0V,TJ =150°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 30V
Gate-to-Source Reverse Leakage
–––
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Forward Trans conductance
17
–––
–––
S
VDS = 50V, ID = 26A
Qg
Total Gate Charge
–––
60
91
ID = 26A
Qgs
Gate-to-Source Charge
–––
17
25
VDS = 100V
Qgd
Gate-to-Drain Charge
–––
28
42
VGS = 10V 
td(on)
Turn-On Delay Time
–––
16
–––
ns
VDD = 100V
tr
Rise Time
–––
95
–––
ID =26A
td(off)
Turn-Off Delay Time
–––
29
–––
RG= 2.5
tf
Fall Time
–––
47
–––
VGS = 10V 
Ciss
Input Capacitance
–––
2900
–––
pF  
VGS = 0V
Coss
Output Capacitance
–––
450
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
73
–––
ƒ = 1.0MHz
Coss
Output Capacitance
–––
3550
–––
VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
Coss
Output Capacitance
–––
180
–––
VGS = 0V, VDS = 160V ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
380
–––
VGS = 0V, VDS = 0V to 160V
nC  
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
44
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
180
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.5
V
TJ = 25°C,IS = 26A,VGS = 0V 
trr
Reverse Recovery Time
–––
160
240
ns TJ = 25°C ,IF = 26A
Qrr
Reverse Recovery Charge
–––
1.3
2.0
C di/dt = 100A/µs 
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Avalanche Characteristics
Parameter
Min.
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy 
–––
–––
460
mJ
IAR
Avalanche Current 
–––
–––
26
EAR
Repetitive Avalanche Energy 
–––
390
–––
mJ
VDS (Avalanche)
Repetitive Avalanche Voltage
260
–––
–––
V


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