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IRFB38N20DPBF Arkusz danych(PDF) 2 Page - Infineon Technologies AG |
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IRFB38N20DPBF Arkusz danych(HTML) 2 Page - Infineon Technologies AG |
2 / 12 page IRFB/S/SL38N20DPbF 2 2016-5-31 Notes: Repetitive rating; pulse width limited by max. junction temperature. starting TJ = 25°C, L = 1.3mH, RG = 25, IAS = 26A. ISD 26A, di/dt 390A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 300µs; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. This is only applied to TO-220AB package. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.22 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.054 VGS = 10V, ID = 26A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS =200 V, VGS = 0V ––– ––– 250 VDS = 160V,VGS = 0V,TJ =150°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 30V Gate-to-Source Reverse Leakage ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Forward Trans conductance 17 ––– ––– S VDS = 50V, ID = 26A Qg Total Gate Charge ––– 60 91 ID = 26A Qgs Gate-to-Source Charge ––– 17 25 VDS = 100V Qgd Gate-to-Drain Charge ––– 28 42 VGS = 10V td(on) Turn-On Delay Time ––– 16 ––– ns VDD = 100V tr Rise Time ––– 95 ––– ID =26A td(off) Turn-Off Delay Time ––– 29 ––– RG= 2.5 tf Fall Time ––– 47 ––– VGS = 10V Ciss Input Capacitance ––– 2900 ––– pF VGS = 0V Coss Output Capacitance ––– 450 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 73 ––– ƒ = 1.0MHz Coss Output Capacitance ––– 3550 ––– VGS = 0V, VDS = 1.0V ƒ = 1.0MHz Coss Output Capacitance ––– 180 ––– VGS = 0V, VDS = 160V ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 380 ––– VGS = 0V, VDS = 0V to 160V nC Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 44 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 180 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C,IS = 26A,VGS = 0V trr Reverse Recovery Time ––– 160 240 ns TJ = 25°C ,IF = 26A Qrr Reverse Recovery Charge ––– 1.3 2.0 C di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Avalanche Characteristics Parameter Min. Typ. Max. Units EAS Single Pulse Avalanche Energy ––– ––– 460 mJ IAR Avalanche Current ––– ––– 26 A EAR Repetitive Avalanche Energy ––– 390 ––– mJ VDS (Avalanche) Repetitive Avalanche Voltage 260 ––– ––– V |
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