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IRF7805PBF-1 Arkusz danych(PDF) 3 Page - Infineon Technologies AG |
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IRF7805PBF-1 Arkusz danych(HTML) 3 Page - Infineon Technologies AG |
3 / 6 page IRF7805TRPbF-1 3 2016-08-23 Fig. 2 Typical Gate Charge vs. Gate-to-Source Voltage Fig. 4 Typical Source-Drain Diode Forward Voltage Fig. 1 Normalized On-Resistance vs. Temperature Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 150 C J ° Fig. 3 Typical Rds(on) vs. Gate-to-Source Voltage |
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