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IRF1407LPbF Arkusz danych(PDF) 1 Page - Infineon Technologies AG |
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IRF1407LPbF Arkusz danych(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page IRF1407SPbF IRF1407LPbF VDSS 75V RDS(on) 0.0078 ID 100A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1407L) is available for low-profile applications. 1 2016-5-26 Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 100 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 70 IDM Pulsed Drain Current 520 PD @TA = 25°C Maximum Power Dissipation 3.8 W PD @TC = 25°C Maximum Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy (Thermally Limited) 390 mJ IAR Avalanche Current See Fig.15,16, 12a, 12b A EAR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt 4.6 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 0.75 °C/W RJA Junction-to-Ambient ( PCB Mount, steady state) ––– 40 D2 Pak IRF1407SPbF G D S Gate Drain Source Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free S D G S D G D TO-262 Pak IRF1407LPbF Base part number Package Type Standard Pack Form Quantity IRF1407LPbF TO-262 Tube 50 IRF1407LPbF (Obsolete) IRF1407SPbF D2-Pak Tape and Reel Left 800 IRF1407STRLPbF Orderable Part Number HEXFET® Power MOSFET |
Podobny numer części - IRF1407LPbF |
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