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STPSC20H12D Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STPSC20H12D
Szczegółowy opis  1200 V power Schottky silicon carbide diode
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC20H12D Arkusz danych(HTML) 3 Page - STMicroelectronics

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STPSC20H12
Characteristics
DocID029343 Rev 2
3/8
1.1
Characteristics (curves)
Figure 1: Forward voltage drop versus forward
current (typical values)
Figure 2: Reverse leakage current versus reverse
voltage applied (typical values)
Figure 3: Peak forward current versus case
temperature
Figure 4: Junction capacitance versus reverse
voltage applied (typical values)
Figure 5: Relative variation of thermal impedance
junction to case versus pulse duration
Figure 6: Non- repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform )
0
5
10
15
20
25
30
35
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VF(V)
T
a = 150 °C
Pulse test : t
p = 500 µs
T
a = 25 °C
IF(A)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0
100
200
300
400
500
600
700
800
900 1000 1100 1200
VR(V)
T
j = 25 °C
T
j = 150 °C
IR(µA)
0
20
40
60
80
100
120
140
0
25
50
75
100
125
150
175
Tc (°C)
T
δ = tp/T
tp
δ = 0.1
δ = 0.3
δ = 0.5
δ = 1
δ = 0.7
IM(A)
0
200
400
600
800
1000
1200
1400
1600
1800
0.1
1
10
100
1000
10000
VR(V)
F = 1 MHz
V
OSC = 30 mVRMS
T
j = 25 °C
Cj(pF)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
tp (s)
Single pulse
Zth(j-c)/Rth(j-c)
1.E+02
1.E+03
1.E-05
1.E-04
1.E-03
1.E-02
tp(s)
Ta= 25 °C
Ta= 150 °C
IFSM(A)


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