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IRF7580MPbF Arkusz danych(PDF) 2 Page - International Rectifier

Numer części IRF7580MPbF
Szczegółowy opis  DirectFET짰 N-Channel Power MOSFET
Download  11 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF7580MPbF Arkusz danych(HTML) 2 Page - International Rectifier

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IRF7580MTRPbF
 
2
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
February 13, 2014
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
Absolute Maximum Ratings
  
 
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
116
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
82
A
IDM
Pulsed Drain Current 
460
 
PD @TC = 25°C
Maximum Power Dissipation
115
W
Linear Derating Factor
0.78
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ
Operating Junction and
-55 to + 175
°C
TSTG
Storage Temperature Range
Avalanche Characteristics
  
EAS (Thermally limited)
Single Pulse Avalanche Energy 
100
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value 
120
IAR
Avalanche Current 
70
A
EAR
Repetitive Avalanche Energy 
12
mJ
Thermal Resistance
  
 
Symbol
Parameter
Typ.
Max.
Units
RJA
Junction-to-Ambient 
–––
44
RJA
Junction-to-Ambient 
12.5
–––
RJA
Junction-to-Ambient 
20
–––
°C/W
RJC
Junction-to-Case 
–––
1.3
RJA-PCB
Junction-to-PCB Mounted 
0.75
–––
Static @ TJ = 25°C (unless otherwise specified)
   
 
 
 
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
44
––– mV/°C Reference to 25°C, ID = 1.0mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.9
3.6
m
 VGS = 10V, ID = 70A 
–––
3.5
––– 
m
 VGS = 6.0V, ID = 35A 
VGS(th)
Gate Threshold Voltage
2.1
––– 
3.7
V
VDS = VGS, ID = 150µA
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS = 60V, VGS = 0V
–––
–––
150
VDS = 60V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
RG
Internal Gate Resistance
–––
0.8
–––
IGSS
TC measured with thermocouple mounted to top (Drain) of part.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
 
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)


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