TPC8402 datasheet(1/11 Pages) TOSHIBA

Numer części	TPC8402

Szczegółowy opis	TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (MOSVI/U-MOSII)

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Producent	TOSHIBA [Toshiba Semiconductor]

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TPC8402

2002-05-07

1

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π−MOS

VI/U−MOSII)

TPC8402

Lithium Ion Secondary Battery Applications

Notebook PCs

Portable Equipment Applications

Low drain−source ON resistance

: P Channel RDS (ON) = 27 mΩ (typ.)

N Channel RDS (ON) = 37 mΩ (typ.)

High forward transfer admittance

: P Channel |Yfs| = 7 S (typ.)

N Channel |Yfs| = 6 S (typ.)

Low leakage current

: P Channel IDSS = −10 µA (VDS = −30 V)

N Channel IDSS = 10 µA (VDS = 30 V)

Enhancement−mode

: P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA)

N Channel Vth = 0.8~2.0 V (VDS = 10 V, ID = 1mA)

Maximum Ratings (Ta = 25°C)

Rating

Characteristics

Symbol

P Channel N Channel

Unit

Drain-source voltage

VDSS

−30

30

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

−30

30

V

Gate-source voltage

VGSS

±20

V

DC

(Note 1)

ID

−4.5

5

Drain current

Pulse

(Note 1)

IDP

−18

20

A

Single-device operation

(Note 3a)

PD (1)

1.5

Drain power

dissipation

(t = 10s)

(Note 2a)

Single-device value at

dual operation (Note 3b)

PD (2)

1.0

Single-device operation

(Note 3a)

PD (1)

0.75

Drain power

dissipation

(t = 10s)

(Note 2b)

Single-device value at

dual operation (Note 3b)

PD (2)

0.45

W

Single pulse avalanche energy

EAS

26.3

(Note 4a)

32.5

(Note 4b)

mJ

Avalanche current

IAR

−4.5

5

A

Repetitive avalanche energy

Single-device value at operation

(Note 2a, Note 3b, Note 5)

EAR

0.10

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1E

Weight: 0.080 g (typ.)

Circuit Configuration

Podobny numer części - TPC8402

Producent	Numer części	Arkusz danych	Szczegółowy opis
Toshiba Semiconductor	TPC8401	750Kb / 11P	TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)
	TPC8403	309Kb / 11P	Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
	TPC8403	272Kb / 11P	Motor Drive Applications Notebook PC Applications Portable Equipment Applications
	TPC8403	272Kb / 11P	Motor Drive Applications Notebook PC Applications Portable Equipment Applications
	TPC8405	275Kb / 11P	Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)

More results

Podobny opis - TPC8402

Producent	Numer części	Arkusz danych	Szczegółowy opis
Toshiba Semiconductor	TPC8401	750Kb / 11P	TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)
	TPC8303	520Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
	SSM3J130TU	210Kb / 6P	TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
	SSM3J135TU	214Kb / 6P	TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
	SSM3J328R	235Kb / 6P	TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
	SSM6J08FU	162Kb / 6P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
	SSM3J13T	182Kb / 6P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
	SSM3J14T	179Kb / 6P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
	SSM6J501NU	212Kb / 6P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOSVI)
	SSM3J334R	235Kb / 6P	TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

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