MC74VHCT86A_14 datasheet(3/6 Pages) ONSEMI

Numer części	MC74VHCT86A

Szczegółowy opis	Quad 2-Input XOR Gate / CMOS Logic Level Shifter

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MC74VHCT86A

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DC ELECTRICAL CHARACTERISTICS

VCC

TA = 25°C

TA ≤ 85°C

TA ≤ 125°C

Symbol

Parameter

Test Conditions

(V)

Min

Typ

Max

Min

Max

Min

Max

Unit

VIH

Minimum High−Level

Input Voltage

3.0

4.5

5.5

1.2

2.0

1.2

2.0

1.2

2.0

V

VIL

Maximum Low−Level

Input Voltage

3.0

4.5

5.5

0.53

0.8

0.53

0.8

0.53

0.8

V

VOH

Minimum High−Level

Output Voltage

VIN = VIH or VIL

IOH = −50μA

3.0

4.5

2.9

4.4

3.0

4.5

2.9

4.4

2.9

4.4

V

VIN = VIH or VIL

IOH = −4mA

IOH = −8mA

3.0

4.5

2.58

3.94

2.48

3.80

2.34

3.66

V

VOL

Maximum Low−Level

Output Voltage

VIN = VIH or VIL

IOL = 50μA

3.0

4.5

0.0

0.1

V

VIN = VIH or VIL

IOL = 4mA

IOL = 8mA

3.0

4.5

0.36

0.44

0.52

V

IIN

Maximum Input

Leakage Current

VIN = 5.5V or GND

0 to

5.5

±0.1

±1.0

μA

ICC

Maximum Quiescent

Supply Current

VIN = VCC or GND

5.5

2.0

20

40

μA

ICCT

Quiescent Supply

Current

Input: VIN = 3.4V

5.5

1.35

1.50

1.65

mA

IOPD

Output Leakage

Current

VOUT = 5.5V

0.0

0.5

5.0

10

μA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)

Symbol

Parameter

Test Conditions

TA = 25°C

TA = − 40 to 85°C

Unit

Min

Typ

Max

Min

Max

tPLH,

tPHL

Propagation Delay,

A or B to Y

VCC = 3.3 ± 0.3V

CL = 15pF

CL = 50pF

7.0

9.5

11.0

14.5

1.0

13.0

16.5

ns

VCC = 5.0 ± 0.5V

CL = 15pF

CL = 50pF

4.8

6.3

6.8

8.8

1.0

8.0

10.0

Cin

Input Capacitance

4

10

pF

CPD

Power Dissipation Capacitance (Note 1)

Typical @ 25

°C, VCC = 5.0V

pF

18

1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per gate). CPD is used to determine the

no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.

3.0V

GND

50%

50% VCC

A or B

Y

tPHL

tPLH

*Includes all probe and jig capacitance

CL*

TEST POINT

DEVICE

UNDER

TEST

OUTPUT

Figure 1. Switching Waveforms

Figure 2. Test Circuit

VOH

VOL

Podobny numer części - MC74VHCT86A_14

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Podobny opis - MC74VHCT86A_14

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Renesas Technology Corp	HD74LV1GT08A	101Kb / 7P	2.input AND Gate / CMOS Logic Level Shifter
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