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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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2SK763 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK763 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK763 · ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 400 V VGS(th) Gate Threshold Voltage VDS=25 V; ID=1mA 1.0 5.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A 0.9 1.4 Ω IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ± 1 uA IDSS Zero Gate Voltage Drain Current VDS=320V; VGS= 0 100 uA ton Turn-on time VGS=10V;ID=3A; RL=50Ω 40 ns toff Turn-off time 170 ns |
Podobny numer części - 2SK763 |
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Podobny opis - 2SK763 |
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