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IRF530N Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części IRF530N
Szczegółowy opis  N-Channel MOSFET Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF530N Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IRF530N
·
FEATURES
·
Low RDS(on)
·
VGS Rated at ±20V
·
Silicon Gate for Fast Switching Speed
·
Rugged
·
Low Drive Requirements
·
DESCRITION
·
Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current-Continuous
17
A
IDM
Drain Current-Single Plused
68
A
PD
Total Dissipation @TC=25℃
79
W
Tj
Max. Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.9
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
60
℃
/W


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