CSD18512Q5BT datasheet(5/13 Pages) TI1

Numer części	CSD18512Q5BT

Szczegółowy opis	CSD18512Q5B 40 V N-Channel NexFET Power MOSFET

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Producent	TI1 [Texas Instruments]

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TC - Case Temperature (°C)

-75

-50

-25

0

25

50

75

100

125

150

175

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

D006

VGS - Gate-to-Source Voltage (V)

0

2

4

6

8

10

12

14

16

18

20

0

1

2

3

4

5

6

7

8

D007

TC = 25°C, I D = 30 A

TC = 125°C, I D = 30 A

Qg - Gate Charge (nC)

0

10

20

30

40

50

60

70

80

0

1

2

3

4

5

6

7

8

9

10

D004

VDS - Drain-to-Source Voltage (V)

0

4

8

12

16

20

24

28

32

36

40

100

1000

10000

D005

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

VDS - Drain-to-Source Voltage (V)

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

0

20

40

60

80

100

120

140

160

180

200

D002

VGS = 4.5 V

VGS = 6 V

VGS = 10 V

VGS - Gate-to-Source Voltage (V)

0

0.5

1

1.5

2

2.5

3

3.5

4

0

20

40

60

80

100

120

140

160

180

200

D003

D002

TC = 125°C

TC = 25°C

TC = -55°C

5

CSD18512Q5B

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Typical MOSFET Characteristics (continued)

TA = 25°C (unless otherwise stated)

Figure 2. Saturation Characteristics

VDS = 5 V

Figure 3. Transfer Characteristics

ID = 30 A, VDS = 20 V

Figure 4. Gate Charge

Figure 5. Capacitance

ID = 250 µA

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Podobny numer części - CSD18512Q5BT

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