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2SD1815 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1815 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD1815 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 150mA 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 150mA 1.2 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= 0 120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 1 uA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1 uA hFE1 DC Current Gain IC= 0.5A; VCE= 5V 70 400 hFE2 DC Current Gain IC= 2A; VCE= 5V 40 COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 25 pF fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 180 MHz hFE1 Classifications Q R S T 70-140 100-200 140-280 200-400 |
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