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2SD2091 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD2091 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD2091 DESCRIPTION · High DC Current Gain- : hFE = 1000(Min)@ IC= 1A · Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A · Incorporating a built-in zener diode · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Low-frequency power amplifier amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80-110 V VCEO Collector-Emitter Voltage 80-110 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Base Current-Peak 3 A PC Collector Power Dissipation @ TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Podobny numer części - 2SD2091 |
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Podobny opis - 2SD2091 |
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