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MTB028N10QNCQ8-0-T3-G Arkusz danych(PDF) 2 Page - Cystech Electonics Corp.

Numer części MTB028N10QNCQ8-0-T3-G
Szczegółowy opis  N-Channel Enhancement Mode Power MOSFET
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Producent  CYSTEKEC [Cystech Electonics Corp.]
Strona internetowa  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB028N10QNCQ8-0-T3-G Arkusz danych(HTML) 2 Page - Cystech Electonics Corp.

  MTB028N10QNCQ8-0-T3-G Datasheet HTML 1Page - Cystech Electonics Corp. MTB028N10QNCQ8-0-T3-G Datasheet HTML 2Page - Cystech Electonics Corp. MTB028N10QNCQ8-0-T3-G Datasheet HTML 3Page - Cystech Electonics Corp. MTB028N10QNCQ8-0-T3-G Datasheet HTML 4Page - Cystech Electonics Corp. MTB028N10QNCQ8-0-T3-G Datasheet HTML 5Page - Cystech Electonics Corp. MTB028N10QNCQ8-0-T3-G Datasheet HTML 6Page - Cystech Electonics Corp. MTB028N10QNCQ8-0-T3-G Datasheet HTML 7Page - Cystech Electonics Corp. MTB028N10QNCQ8-0-T3-G Datasheet HTML 8Page - Cystech Electonics Corp. MTB028N10QNCQ8-0-T3-G Datasheet HTML 9Page - Cystech Electonics Corp.  
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CYStech Electronics Corp.
Spec. No. : C168Q8
Issued Date : 2016.11.18
Revised Date : 2016.11.22
Page No. : 2/9
MTB028N10QNCQ8
CYStek Product Specification
Absolute Maximum Ratings (Tc=25
°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @ TA=25
°C, VGS=10V
6.6
Continuous Drain Current @ TA=70
°C, VGS=10V
ID
5.3
Pulsed Drain Current
IDM
30 *1
Avalanche Current @ L=0.1mH
IAS
30
A
Avalanche Energy @ L=1mH, ID=16A, VDD=25V
EAS
128 *3
Repetitive Avalanche Energy @ L=0.05mH
EAR
1.6 *2
mJ
TA=25
°C
3.1
Total Power Dissipation
TA=70
°C
PD
2
W
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
Note : *1
. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
*3. 100% tested by conditions of L=0.5mH, IAS=10A, VGS=10V, VDD=25V
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case
RθJC
20
Thermal Resistance, Junction-to-ambient (Note)
RθJA
40
°C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25
°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
100
-
-
VGS=0V, ID=250μA
VGS(th)
1.2
-
2.7
V
VDS = VGS, ID=250μA
GFS
-
10.6
-
S
VDS =10V, ID=5A
IGSS
-
-
±
100
nA
VGS=±20V
-
-
1
VDS =80V, VGS =0V
IDSS
-
-
25
μA
VDS =80V, VGS =0V, Tj=125
°C
-
19.3
25
VGS =10V, ID=4A
*RDS(ON)
-
27.0
36
VGS =4.5V, ID=3A
Dynamic
Qg *1, 2
-
28
-
Qgs *1, 2
-
2.2
-
Qgd *1, 2
-
13.6
-
nC
VDS=80V, VGS=10V, ID=4A
Ciss
-
637
-
Coss
-
90
-
Crss
-
81
-
pF
VDS=50V, VGS=0V, f=1MHz


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