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Zakładka z wyszukiwarką danych komponentów |
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MTB028N10RNCQ8-0-T3-G Arkusz danych(PDF) 3 Page - Cystech Electonics Corp. |
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MTB028N10RNCQ8-0-T3-G Arkusz danych(HTML) 3 Page - Cystech Electonics Corp. |
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3 / 9 page  CYStech Electronics Corp. Spec. No. : C053Q8 Issued Date : 2016.11.22 Revised Date : Page No. : 3/9 MTB028N10RNCQ8 CYStek Product Specification Characteristics (Cont. TC=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Dynamic td(ON) *1, 2 - 10.8 - tr *1, 2 - 17.2 - td(OFF) *1, 2 - 50.6 - tf *1, 2 - 15.2 - ns VDS=50V, ID=1A, VGS=10V, RGS=6Ω Rg - 1.8 - Ω f=1MHz Source-Drain Diode Ratings and Characteristics IS *1 - - 6.6 ISM *3 - - 30 A VSD *1 - 0.75 1.2 V IS=2A, VGS=0V trr - 21.7 - ns Qrr - 21.5 - nC IF=2A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint |
Podobny numer części - MTB028N10RNCQ8-0-T3-G |
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Podobny opis - MTB028N10RNCQ8-0-T3-G |
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