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BDW42G Arkusz danych(PDF) 2 Page - ON Semiconductor |
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BDW42G Arkusz danych(HTML) 2 Page - ON Semiconductor |
2 / 7 page BDW42G (NPN), BDW46G, BDW47G (PNP) www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) BDW46 BDW42/BDW47 VCEO(sus) 80 100 − − Vdc Collector Cutoff Current (VCE = 40 Vdc, IB = 0) BDW46 (VCE = 50 Vdc, IB = 0) BDW42/BDW47 ICEO − − 2.0 2.0 mAdc Collector Cutoff Current (VCB = 80 Vdc, IE = 0) BDW46 (VCB = 100 Vdc, IE = 0) BDW42/BDW47 ICBO − − 1.0 1.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 2.0 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 5.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE 1000 250 − − Collector−Emitter Saturation Voltage (IC = 5.0 Adc, IB = 10 mAdc) (IC = 10 Adc, IB = 50 mAdc) VCE(sat) − − 2.0 3.0 Vdc Base−Emitter On Voltage (IC = 10 Adc, VCE = 4.0 Vdc) VBE(on) − 3.0 Vdc SECOND BREAKDOWN (Note 2) Second Breakdown Collector Current with Base Forward Biased BDW42 VCE = 28.4 Vdc VCE = 40 Vdc BDW46/BDW47 VCE = 22.5 Vdc VCE = 36 Vdc IS/b 3.0 1.2 3.8 1.2 − − − − Adc DYNAMIC CHARACTERISTICS Magnitude of common emitter small signal short circuit current transfer ratio (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) fT 4.0 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDW42 BDW46/BDW47 Cob − − 200 300 pF Small−Signal Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe 300 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2. Pulse Test non repetitive: Pulse Width = 250 ms. |
Podobny numer części - BDW42G |
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Podobny opis - BDW42G |
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