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TPC8301 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor

Numer części TPC8301
Szczegółowy opis  Silicon P Channel MOS Type (L2-MOSVI)
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8301 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor

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TPC8301
2002-05-17
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSVI)
TPC8301
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Small footprint due to small and thin package
Low drain−source ON resistance : RDS (ON) = 95 mΩ (typ.)
High forward transfer admittance : |Yfs| = 4 S (typ.)
Low leakage current : IDSS = −10 µA (max) (VDS = −30 V)
Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−30
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
−30
V
Gate−source voltage
VGSS
±20
V
D C
(Note 1)
ID
−3.5
Drain current
Pulse
(Note 1)
IDP
−14
A
Single-device
operation (Note 3a)
PD (1)
1.5
Drain power
dissipation
(t = 10 s)
(Note 2a)
Single-devece value
at dual operation
(Note 3b)
PD (2)
1.0
W
Single-device
operation (Note 3a)
PD (1)
0.75
Drain power
dissipation
(t = 10 s)
(Note 2b)
Single-devece value
at dual operation
(Note 3b)
PD (2)
0.45
W
Single pulse avalanche energy
(Note 4)
EAS
16
mJ
Avalanche current
IAR
−3.5
A
Repetitive avalanche energy
(Note 2a, Note 3b, Note 5)
EAR
0.10
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55∼150
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration


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