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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRL3713L Arkusz danych(PDF) 2 Page - International Rectifier |
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IRL3713L Arkusz danych(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRL3713/S/L 2 www.irf.com Symbol Parameter Min Typ Max Units V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.027 ––– V/°C ––– 2.6 3.0 ––– 3.3 4.0 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V ––– ––– 50 ––– ––– 20 ––– ––– 100 Gate-to-Source Forward Leakage ––– ––– 200 Gate-to-Source Reverse Leakage ––– ––– -200 Symbol Parameter Min Typ Max Units gfs Forward Transconductance 76 ––– ––– S Qg Total Gate Charge ––– 75 110 Qgs Gate-to-Source Charge ––– 24 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 37 ––– QOSS Output Gate Charge 61 92 RG Gate Resistance 0.5 ––– 3.4 Ω td(on) Turn-On Delay Time ––– 16 ––– tr Rise Time ––– 160 ––– td(off) Turn-Off Delay Time ––– 40 ––– tf Fall Time ––– 57 ––– Ciss Input Capacitance ––– 5890 ––– Coss Output Capacitance ––– 3130 ––– Crss Reverse Transfer Capacitance ––– 630 ––– Symbol Parameter Units EAS mJ IAR A Symbol Parameter Min Typ Max Units Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Ãh ––– 0.80 1.3 ––– 0.68 ––– trr Reverse Recovery Time ––– 75 110 ns Qrr Reverse Recovery Charge ––– 140 210 nC trr Reverse Recovery Time ––– 78 120 ns Qrr Reverse Recovery Charge ––– 160 240 nC TJ = 125°C, IF = 30A, VR = 20V di/dt = 100A/µs e TJ = 125°C, IS = 30A, VGS = 0V e TJ = 25°C, IF = 30A, VR = 0V di/dt = 100A/µs e Conditions integral reverse p-n junction diode. TJ = 25°C, IS = 30A, VGS = 0V e MOSFET symbol showing the ––– Conditions VDS = 15V, ID = 30A ID = 30A VDS = 15V VGS = 4.5V e VGS = 0V VDS = 15V 1530 46 VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 38A e VGS = -20V VGS = 4.5V, ID = 30A e Max VGS = 4.5V f VDD = 15V ID = 30A RG = 1.8Ω VDS = 24V, VGS = 0V ƒ = 1.0MHz VDS = VGS, ID = 250µA Static @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS Diode Characteristics Avalanche Characteristics Dynamic @ TJ = 25°C (unless otherwise specified) m Ω IDSS Drain-to-Source Leakage Current µA Avalanche Current à Typ ––– nA ns pF Single Pulse Avalanche Energy d IS ––– ––– 260 h VGS = 0V, VDS = 15V VSD Diode Forward Voltage V A ISM ––– ––– 1040 h |
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