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Si8261BCD-C-IM Arkusz danych(PDF) 10 Page - Silicon Laboratories |
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Si8261BCD-C-IM Arkusz danych(HTML) 10 Page - Silicon Laboratories |
10 / 40 page Si826x 10 Rev. 1.3 Table 5. IEC 60664-1 (VDE 0884) Ratings Parameter Test Conditions Specification SOIC-8 DIP8 SDIP6 LGA8 Basic Isolation Group Material Group I I I I Installation Classification Rated Mains Voltages < 150 VRMS I-IV I-IV I-IV I-IV Rated Mains Voltages < 300 VRMS I-IV I-IV I-IV I-IV Rated Mains Voltages < 450 VRMS I-III I-III I-IV I-IV Rated Mains Voltages < 600 VRMS I-III I-III I-IV I-IV Rated Mains Voltages < 1000 VRMS I-II I-II I-III I-III Table 6. IEC 60747-5-2 (VDE 0884-10) Insulation Characteristics* Parameter Symbol Test Condition Characteristic Unit SOIC-8 DIP8 SDIP6 LGA8 Maximum Working Insulation Voltage VIORM 630 891 1140 1414 V peak Input to Output Test Voltage VPR Method b1 (VIORM x 1.875 = VPR, 100% Production Test, tm = 1 sec, Partial Discharge < 5 pC) 1181 1671 2138 2652 V peak Transient Overvoltage VIOTM t = 60 sec 6000 6000 8000 8000 V peak Pollution Degree (DIN VDE 0110, Table 1) 22 2 2 Insulation Resistance at TS, VIO =500 V RS >109 >109 >109 >109 *Note: This isolator is suitable for reinforced electrical isolation only within the safety limit data. Maintenance of the safety data is ensured by protective circuits. The Si826x provides a climate classification of 40/125/21. Table 7. IEC Safety Limiting Values* Parameter Symbol Test Condition Max Unit SOIC-8 DIP8 SDIP6 LGA8 Case Temperature TS 140 140 140 140 °C Input Current IS JA = 110 °C/W (SOIC-8), 110 °C/W (DIP8), 105 °C/W (SDIP6), 220 °C (LGA8), VF =2.8 V, TJ =140 °C, TA =25°C 370 370 390 185 mA Output Power PS 11 1 0.5 W *Note: Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 5, 6, 7, and 8. |
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