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TIP31G Arkusz danych(PDF) 2 Page - ON Semiconductor

Numer części TIP31G
Szczegółowy opis  Complementary Silicon Plastic Power Transistors
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TIP31G Arkusz danych(HTML) 2 Page - ON Semiconductor

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TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,
TIP32CG (PNP)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
VCEO(sus)
40
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP31G, TIP32G, TIP31AG, TIP32AG
(VCE = 60 Vdc, IB = 0)
TIP31BG, TIP31CG, TIP32BG, TIP32CG
ICEO
0.3
0.3
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
TIP31G, TIP32G
(VCE = 60 Vdc, VEB = 0)
TIP31AG, TIP32AG
(VCE = 80 Vdc, VEB = 0)
TIP31BG, TIP32BG
(VCE = 100 Vdc, VEB = 0)
TIP31CG, TIP32CG
ICES
200
200
200
200
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
1.0
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
25
10
50
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 375 mAdc)
VCE(sat)
1.2
Vdc
Base−Emitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
MHz
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.


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