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TIP31AG Arkusz danych(PDF) 4 Page - ON Semiconductor |
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TIP31AG Arkusz danych(HTML) 4 Page - ON Semiconductor |
4 / 7 page TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) www.onsemi.com 4 t, TIME (ms) 1.0 0.01 0.01 0.1 1.0 1.0 100 ZqJC(t) = r(t) RqJC RqJC(t) = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) P(pk) t1 t2 SINGLE PULSE 1.0 k D = 0.5 0.05 DUTY CYCLE, D = t1/t2 Figure 4. Thermal Response 0.1 0.05 0.03 0.02 0.07 0.5 0.3 0.2 0.7 0.02 0.05 0.2 0.5 2.0 5.0 200 500 10 20 50 0.2 0.02 0.01 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 10 20 5.0 50 100 Figure 5. Active Region Safe Operating Area 0.2 0.1 0.5 SECONDARY BREAKDOWN LIMITED @ TJ ≤ 150°C THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) BONDING WIRE LIMIT 1.0ms 100 ms 2.0 1.0 10 5.0 5.0ms CURVES APPLY BELOW RATED VCEO TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150 °C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.05 0.1 0.2 0.7 0.03 0.3 0.5 0.07 IC, COLLECTOR CURRENT (AMP) Figure 6. Turn−Off Time 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 1.0 2.0 3.0 0.2 0.5 1.0 5.0 0.1 2.0 3.0 0.3 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance 300 200 100 70 50 30 10 20 40 30 tf @ VCC = 30 V tf @ VCC = 10 V ts′ IB1 = IB2 IC/IB = 10 ts′ = ts - 1/8 tf TJ = 25°C TJ = +25°C Ceb Ccb |
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