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TIP32BG Arkusz danych(PDF) 1 Page - ON Semiconductor

Numer części TIP32BG
Szczegółowy opis  Complementary Silicon Plastic Power Transistors
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
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TIP32BG Arkusz danych(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 16
1
Publication Order Number:
TIP31A/D
TIP31G, TIP31AG, TIP31BG,
TIP31CG (NPN),
TIP32G,TIP32AG, TIP32BG,
TIP32CG(PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
High Current Gain − Bandwidth Product
Compact TO−220 Package
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
VCEO
40
60
80
100
Vdc
Collector−Base Voltage
TIP31G, TIP32G
TIP31AG, TIP32AG
TIP31BG, TIP32BG
TIP31CG, TIP32CG
VCB
40
60
80
100
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
IC
3.0
Adc
Collector Current − Peak
ICM
5.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25
°C
PD
40
0.32
W
W/
°C
Total Power Dissipation
@ TA = 25°C
Derate above 25
°C
PD
2.0
0.016
W
W/
°C
Unclamped Inductive Load Energy
(Note 1)
E
32
mJ
Operating and Storage Junction Tem-
perature Range
TJ, Tstg
– 65 to + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
Thermal Resistance, Junction−to−Case
RqJC
3.125
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40−60−80−100 VOLTS,
40 WATTS
www.onsemi.com
1
2
3
4
TIP3xx
= Device Code
xx
= 1, 1A, 1B, 1C,
2, 2A, 2B, 2C,
A
= Assembly Location
Y
= Year
WW
= Work Week
G
Pb−Free Package
TIP3xxG
AYWW
See detailed ordering and shipping information on page 6 of
this data sheet.
ORDERING INFORMATION
1
BASE
3
EMITTER
COLLECTOR
2,4
1
BASE
3
EMITTER
COLLECTOR
2,4
NPN
PNP


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