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CAS325M12HM2 Arkusz danych(PDF) 2 Page - Cree, Inc |
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CAS325M12HM2 Arkusz danych(HTML) 2 Page - Cree, Inc |
2 / 7 page 2 CAS325M12HM2, Rev. A, 12-2016 Electrical Characteristics (T C = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VDSS Drain-SourceBlockingVoltage 1.2 kV V GS=-5V,ID=2mA VGS(th) GateThresholdVoltage 2.0 2.6 4 V V DS=VGS,ID=105mA 2.0 V DS=VGS,ID=105mA,TJ=175˚C IDSS ZeroGateVoltageDrainCurrent 720 2000 μA VDS=1.2kV,VGS=-5V IGSS Gate-SourceLeakageCurrent 3.5 nA V GS=20V,VDS=0V RDS(on) OnStateResistance 3.6 4.3 mΩ VGS=20V,IDS=400A Fig.5 7.6 VGS=18V,IDS=400A,TJ=175˚C Ciss InputCapacitance 19.5 nF VGS=0V,VDS=1000V,f=1MHz, VAC=25mV Fig.11, 12 Coss OutputCapacitance 1.54 Crss ReverseTransferCapacitance 0.10 Eon Turn-OnSwitchingEnergy 5.6 mJ VDD=600V,VGS=-5V/+20V ID=300A,RG(ext)=2Ω Note:IEC60747-8-4Definitions Fig.13 EOff Turn-OffSwitchingEnergy 3.7 QGS Gate-SourceCharge 322 nC VDS=800V,VGS=-5V/+20V, ID=350A,PerIEC60747-8-4 QGD Gate-DrainCharge 350 QG TotalGateCharge 1127 dff Free-Wheeling SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VSD DiodeForwardVoltage 1.7 2.0 V IF=350A,V GS=-5V Fig.6 2.5 2.8 IF=350A,TJ=175˚C,V GS=-5V QC TotalCapacitiveCharge 4.3 μC IncludesSchottky&Bodydiodes Note:Thereverserecoveryispurelycapacitive Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note R thJCM ThermalResistanceJuction-to-CaseforMOSFET 0.085 0.100 0.115 ˚C/W Fig. 18,19 R thJCD ThermalResistanceJuction-to-CaseforDiode 0.094 0.110 0.127 Additional Module Data Symbol Parameter Min. Typ. Max. Unit Test Condtion W Weight 140 g M MountingTorque 0.9 1.1 1.3 Nm PowerTerminals,M4Bolts 3 4.5 5 Baseplate,M6Bolts L CE LoopInductance 5 nH |
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