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ADA4895-2ARMZ-R7 Arkusz danych(PDF) 7 Page - Analog Devices

Numer części ADA4895-2ARMZ-R7
Szczegółowy opis  Low Power, 1 nV/?숰z, G ??10 Stable, Railto- Rail Output Amplifier
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ADA4895-2ARMZ-R7 Arkusz danych(HTML) 7 Page - Analog Devices

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Data Sheet
ADA4895-1/ADA4895-2
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Rating
Supply Voltage
11 V
Power Dissipation
See Figure 4
Common-Mode Input Voltage
−VS − 0.7 V to +VS + 0.7 V
Differential Input Voltage
±0.7 V
Storage Temperature Range
−65°C to +125°C
Operating Temperature Range
−40°C to +125°C
Lead Temperature (Soldering 10 sec)
300°C
Junction Temperature
150°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is specified
for a device soldered in a circuit board for surface-mount
packages. Table 6 lists the θJA for the ADA4895-1/ADA4895-2.
Table 6. Thermal Resistance
Package Type
θJA
Unit
8-Lead Single SOIC
133
°C/W
6-Lead Single SOT-23
150
°C/W
10-Lead Dual MSOP
210
°C/W
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation for the ADA4895-1/
ADA4895-2 is limited by the associated rise in junction
temperature (TJ) on the die. At approximately 150°C, which is the
glass transition temperature, the properties of the plastic change.
Even temporarily exceeding this temperature limit can change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the ADA4895-1/
ADA4895-2. Exceeding a junction temperature of 175°C for an
extended period of time can result in changes in silicon devices,
potentially causing degradation or loss of functionality.
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
die due to the ADA4895-1/ADA4895-2 drive at the output.
PD = Quiescent Power + (Total Drive Power − Load Power)
The quiescent power dissipation is the voltage between the supply
pins (±VS) multiplied by the quiescent current (IS).
(
)
L
OUT
L
OUT
S
S
S
D
R
V
R
V
V
I
V
P
2
2


×
+
×
=
Consider rms output voltages. If RL is referenced to −VS, as in
single-supply operation, the total drive power is VS × IOUT. In
single-supply operation with RL referenced to −VS, the worst
case is VOUT = VS/2.
If the rms signal levels are indeterminate, consider the worst case,
when VOUT = VS/4 with RL referenced to midsupply.
(
) ( )
L
S
S
S
D
R
V
I
V
P
2
4
/
+
×
=
Airflow increases heat dissipation, effectively reducing θJA. Also,
more metal directly in contact with the package leads reduces θJA.
Figure 4 shows the maximum safe power dissipation in the package
vs. the ambient temperature on a JEDEC standard, 4-layer board.
θJA values are approximations.
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
–40
–30
–20
–10
0
10
20
30
40
50
60
70
80
90
100
110
120
AMBIENT TEMPERATURE (°C)
ADA4895-1 (SOIC)
ADA4895-1 (SOT-23)
ADA4895-2 (MSOP)
Figure 4. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
ESD CAUTION
Rev. B | Page 7 of 24


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