MTB030N10RH8 datasheet(3/10 Pages) CYSTEKEC

Numer części	MTB030N10RH8

Szczegółowy opis	N-Channel Enhancement Mode Power MOSFET

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Producent	CYSTEKEC [Cystech Electonics Corp.]

Strona internetowa	http://www.cystekec.com

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3 / 10 page

CYStech Electronics Corp.

Spec. No. : C053H8

Issued Date : 2017.01.23

Revised Date :

Page No. : 3/ 10

MTB030N10RH8

CYStek Product Specification

Characteristics (Tj=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

100

-

V

VGS=0V, ID=250μA

∆BVDSS/∆Tj

-

0.07

-

V/

°C

Reference to 25

°C, ID=250μA

VGS(th)

1

-

2.5

V

VDS = VGS, ID=250μA

*GFS

-

23.7

-

S

VDS =10V, ID=20A

IGSS

-

±

100

nA

VGS=±20V

-

1

VDS =80V, VGS =0V

IDSS

-

5

μA

VDS =80V, VGS =0V, Tj=55

°C

-

25.5

35

VGS =10V, ID=20A

*RDS(ON)

-

29.8

42

mΩ

VGS =4.5V, ID=20A

Dynamic

*Qg

-

27.3

-

*Qgs

-

4.8

-

*Qgd

-

5

-

nC

VDS=80V, ID=20A, VGS=10V

*td(ON)

-

10.8

-

*tr

-

16

-

*td(OFF)

-

41.4

-

*tf

-

5.8

-

ns

VDS=50V, ID=20A, VGS=10V, RG=1Ω

Ciss

-

1327

-

Coss

-

89

-

Crss

-

15

-

pF

VGS=0V, VDS=50V, f=1MHz

Rg

-

1.8

-

Ω

f=1MHz

Source-Drain Diode

*IS

-

18

*ISM

-

72

A

*VSD

-

0.73

1

V

IS=1A, VGS=0V

*trr

-

19.5

-

ns

*Qrr

-

15.2

-

nC

VGS=0V, IF=1A, dIF/dt=100A/μs

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

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