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DAC38RF87IAAV Arkusz danych(PDF) 7 Page - Texas Instruments

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Numer części DAC38RF87IAAV
Szczegółowy opis  Dual- or Single-Channel, Single-Ended, 14-bit, 9-GSPS, RF-Sampling DAC with JESD204B Interface and On-Chip GSM PLL
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Producent  TI1 [Texas Instruments]
Strona internetowa  http://www.ti.com
Logo TI1 - Texas Instruments

DAC38RF87IAAV Arkusz danych(HTML) 7 Page - Texas Instruments

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7
DAC38RF86, DAC38RF87
DAC38RF97, DAC38RF96
www.ti.com
SLASEF4 – FEBRUARY 2017
Product Folder Links: DAC38RF86 DAC38RF87 DAC38RF97 DAC38RF96
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
Measured with respect to AGND or DGND.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply Voltage Range(2)
VDDDAC1, VDDDIG1, VDDL1_1, VDDL2_1,
VDDCLK1, VDDT1, VDDCLK1, VDDTX1, VDDE1
–0.3
1.3
V
VDDR18, VDDIO18, VDDS18, VDDAPLL18,
VDDOUT18, VDDA18, VDDAVCO18, VDDTX18
–0.3
2.45
V
VEE18N
–2
–0.5
V
Voltage between AGND and DGND
–0.3
0.3
V
Pin Voltage Range(2)
RX[0..7]+/-
–0.5
VDDDIG1 + 0.5 V
V
SDEN, SCLK, SDIO, SDO, TXENABLE, ALARM,
RESET, SLEEP, TMS, TCLK, TDI, TDO, TRST,
TESTMODE, GPI0, GPI1, GPO0, GPO1
–0.5
VDDIO + 0.5 V
V
CLKOUT+/-
–0.5
VDDTX18 + 0.5 V
V
DACCLK+/-, SYSREF+/-, DACCLKSE
–0.5
VDDCLK1 + 0.5 V
V
SYNC0+/-, SYNC1+/-
–0.5
VDDS18 + 0.5 V
V
VOUT1+/-, VOUT2+/-
–0.5
VDDAOUT18 + 0.5 V
V
RBIAS, EXTIO, ATEST
–0.5
VDDAOUT18 + 0.5 V
V
IFORCE, VSENSE
–0.5
VDDDIG1 + 0.5 V
V
AMUX1, AMUX0
–0.5
VDDT1 + 0.5 V
V
Peak input current (any input)
20
mA
Peak total input current (all inputs)
–30
mA
Junction temperature TJ
150
°C
Operating free-air temperature, TA
–40
85
°C
Storage temperature, Tstg
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±1000
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±250
(1)
Prolonged use at this junction temperature may increase the device failure-in-time (FIT) rate
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
TJ
Recommended operating temperature
105
°C
Maximum rated operating junction temperature(1)
125
°C
TA
Recommended free-air temperature
–40
85
°C


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