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SI5903DC-T1 Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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SI5903DC-T1 Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Si5903DC Vishay Siliconix Document Number: 71054 S-21251—Rev. B, 05-Aug-02 www.vishay.com 2-1 Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.155 @ VGS =--4.5 V 2.9 --20 0.180 @ VGS =--3.6 V 2.7 0.260 @ VGS =--2.5 V 2.2 Bottom View 1206-8 ChipFETt S1 G1 S2 G2 D1 D1 D2 D2 1 S1 G1 D1 P-Channel MOSFET S2 G2 D2 P-Channel MOSFET Marking Code DA XX Lot Traceability and Date Code Part # Code Ordering Information: Si5903DC-T1 ABSOLUTE MAXIMUM RATINGS (TA =25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS --20 V Gate-Source Voltage VGS 12 V Continuous Drain Current (TJ = 150_C)a TA =25_C ID 2.9 2.1 Continuous Drain Current (TJ = 150_C)a TA =85_C ID 2.1 1.5 A Pulsed Drain Current IDM 10 A Continuous Source Current (Diode Conduction)a IS --1.8 --0.9 Maximum Power Dissipationa TA =25_C PD 2.1 1.1 W Maximum Power Dissipationa TA =85_C PD 1.1 0.6 W Operating Junction and Storage Temperature Range TJ,Tstg --55 to 150 _ C Soldering Recommendations (Peak Temperature)b, c 260 _ C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit M i J ti t A bi ta t ≤ 5sec R 50 60 Maximum Junction-to-Ambienta Steady State RthJA 90 110 _ C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 C/ Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon- nection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. |
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