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SI3443DDV Arkusz danych(PDF) 4 Page - Vishay Siliconix |
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SI3443DDV Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 11 page Si3443DDV www.vishay.com Vishay Siliconix S14-0912-Rev. A, 28-Apr-14 4 Document Number: 62956 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0.65 0.8 0.95 1.1 1.25 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA 0.00 0.02 0.04 0.06 0.08 0.10 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 4.7A Time (s) 0 5 10 15 20 25 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms T A = 25 °C BVDSS Limited 10 ms 100 μs 10s, 1 s DC |
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