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SI3493DDV Arkusz danych(PDF) 5 Page - Vishay Siliconix |
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SI3493DDV Arkusz danych(HTML) 5 Page - Vishay Siliconix |
5 / 7 page Si3493DDV www.vishay.com Vishay Siliconix S16-2645-Rev. A, 26-Dec-16 5 Document Number: 74735 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Current Derating a Power, Junction-to-Case Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 10 100 1000 10000 0 3 6 9 12 025 50 75 100 125 150 Axis Title T C - Case Temperature (°C) 2nd line 10 100 1000 10000 0 0.9 1.8 2.7 3.6 4.5 025 50 75 100 125 150 Axis Title T C - Case Temperature (°C) 2nd line 10 100 1000 10000 0 0.3 0.6 0.9 1.2 1.5 025 50 75 100 125 150 Axis Title T A - Ambient Temperature (°C) 2nd line |
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