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ES3AB Arkusz danych(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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ES3AB Arkusz danych(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification Surface Mount Rectifiers ES3AB--ES3JB Document Number: SMB103AA www.gmicroelec.com 1 FEATURES Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol ,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case: DO-214AA molded plastic Terminals: Solder able per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Maximum Ratings(@TA = 25°C unless otherwise specified) Characteristic Symbol ES3AB ES3BB ES3CB ES3DB ES3GB ES3HB ES3JB UNITS Maximum recurrent peak reverse voltage VRRM 50 100 150 200 400 500 600 V Maximum RMS voltage VRMS 35 70 105 140 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 400 500 600 V Maximum average forward rectified current @TA=100℃ IF(AV) 3.0 A Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @TJ=125℃ IFSM 100 A Thermal Characteristics Characteristic Symbol ES3AB ES3BB ES3CB ES3DB ES3GB ES3HB ES3JB UNITS Typical junction capacitance (Note2) CJ 45 p F Typical thermal resistance (Note3) RθJA 25 ℃ /W Operating junction temperature range TJ - 55 ---- + 150 ℃ Storage temperature range TSTG - 55 ---- + 150 ℃ Electrical Characteristics (@TA = 25°C unless otherwise specified) Characteristic Symbol ES3AB ES3BB ES3CB ES3DB ES3GB ES3HB ES3JB UNITS Maximum instantaneous forward voltage at3.0 A VF 0.95 1.25 1.70 V Maximum reverse current @TA=25℃ at rated DC blocking voltage @TA=125℃ IR 10 500 μ A Maximum reverse recovery time (Note1) trr 35 ns NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A 2. Measured at 1.0MHZ and applied reverse voltage of 4.0VDC 3. Thermal resistance from junction to ambient and junction to lead P.C.B. mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas Pb Lead-free |
Podobny numer części - ES3AB |
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Podobny opis - ES3AB |
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