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SI4276DY-T1-E3 Arkusz danych(PDF) 4 Page - Vishay Siliconix |
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SI4276DY-T1-E3 Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 14 page www.vishay.com 4 Document Number: 67909 S11-0653-Rev. A, 11-Apr-11 Vishay Siliconix Si4276DY-T1-E3 CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 VGS =10Vthru 4V VGS =3V VDS - Drain-to-Source Voltage (V) 0.010 0.012 0.014 0.016 0.018 0.020 0 10203040 50 VGS =10V VGS =4.5 V ID - Drain Current (A) 0 2 4 6 8 10 0369 12 15 18 ID =9.5 A VDS =7.5 V VDS =24V VDS =15V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0.0 0.6 1.2 1.8 2.4 3.0 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) 0 350 700 1050 1400 0 6 12 18 24 30 Ciss Coss Crss VDS - Drain-to-Source Voltage (V) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 VGS =4.5 V ID =8.7 A VGS =10V; ID =9.5 A TJ - Junction Temperature (°C) |
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