SD103AW-G, SD103BW-G, SD103CW-G

www.vishay.com

Vishay Semiconductors

Rev. 1.7, 25-Aug-16

1

Document Number: 85160

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Small Signal Schottky Diodes

MECHANICAL DATA

Case: SOD-123

Weight: approx. 9.4 mg

Cathode band color: black

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

FEATURES

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing, and coupling diodes for fast

switching and low logic level applications

• Other

applications

are

click

suppression,

efficient full wave bridges in telephone subsets,

and blocking diodes in rechargeable low voltage

battery systems

• The SD103 series is a metal-on-silicon Schottky

barrier device which is protected by a PN

junction guardring

• For general purpose applications

• AEC-Q101 qualified

• Base P/N-G3 - green, commercial grade

• Material categorization: for definitions of compliance

Note

Note

PARTS TABLE

PART

ORDERING CODE

INTERNAL

CONSTRUCTION

TYPE MARKING

REMARKS

SD103AW-G

SD103AW-G3-08 or SD103AW-G3-18

Single diode

Z6

Tape and reel

SD103BW-G

SD103BW-G3-08 or SD103BW-G3-18

Single diode

Z7

SD103CW-G

SD103CW-G3-08 or SD103CW-G3-18

Single diode

Z8

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

Repetitive peak reverse voltage

SD103AW-G

40

V

SD103BW-G

30

V

SD103CW-G

20

V

350

mA

400

mW

Single cycle surge

10 μs square wave

2A

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

300

K/W

Junction temperature

125

°C

Operating temperature range

-55 to +125

°C

Storage temperature range

-55 to +150

°C