SI4884 datasheet(5/12 Pages) PHILIPS

Numer części	SI4884

Szczegółowy opis	TrenchMOS??logic level FET

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Philips Semiconductors

SI4884

TrenchMOS™ logic level FET

Product data

Rev. 02 — 12 April 2002

5 of 12

9397 750 09582

5.

Characteristics

Table 4:

Characteristics

Tj =25 °C unless otherwise speciﬁed

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 250 µA; VGS = 0 V

30

--V

VGS(th)

gate-source threshold voltage

ID = 250 µA; VDS =VGS; Figure 9

1-

2V

IDSS

drain-source leakage current

VDS =24V; VGS =0V

Tj =25 °C

--1

µA

Tj = 100 °C

--5

µA

IGSS

gate-source leakage current

VGS = ±20 V; VDS = 0 V

-

100

nA

RDSon

drain-source on-state resistance

VGS = 4.5 V; ID =10A; Figure 7 and 8

-

11

16.5

m

Ω

VGS = 10 V; ID = 12 A;

-

8.9

10.5

m

Ω

Dynamic characteristics

gfs

forward transconductance

VDS =15V; ID =10A;

-

34

-

S

Qg(tot)

total gate charge

ID = 15 A; VDD =16V; VGS =5V; Figure 13

-

17.6

-

nC

Qgs

gate-source charge

-

4

-

nC

Qgd

gate-drain (Miller) charge

-

4.4

-

nC

Ciss

input capacitance

VGS =0V; VDS = 16 V; f = 1 MHz; Figure 11

-

1335 -

pF

Coss

output capacitance

-

391

-

pF

Crss

reverse transfer capacitance

-

190

-

pF

td(on)

turn-on delay time

VDD =16V; RD =10 Ω; VGS = 10 V

-

10.6

-

ns

tr

rise time

-

11.7

-

ns

td(off)

turn-off delay time

-

37

-

ns

tf

fall time

-19

-

ns

Source-drain (reverse) diode

VSD

source-drain (diode forward) voltage IS = 1 A; VGS =0V; Figure 12

-

0.7

1.0

V

trr

reverse recovery time

IS = 2.3 A; dIS/dt = −100 A/µs; VGS =0V

-

70

-

ns

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