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SI4884 Arkusz danych(PDF) 5 Page - NXP Semiconductors |
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SI4884 Arkusz danych(HTML) 5 Page - NXP Semiconductors |
5 / 12 page Philips Semiconductors SI4884 TrenchMOS™ logic level FET Product data Rev. 02 — 12 April 2002 5 of 12 9397 750 09582 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 5. Characteristics Table 4: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V 30 --V VGS(th) gate-source threshold voltage ID = 250 µA; VDS =VGS; Figure 9 1- 2V IDSS drain-source leakage current VDS =24V; VGS =0V Tj =25 °C --1 µA Tj = 100 °C --5 µA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V - 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID =10A; Figure 7 and 8 - 11 16.5 m Ω VGS = 10 V; ID = 12 A; - 8.9 10.5 m Ω Dynamic characteristics gfs forward transconductance VDS =15V; ID =10A; - 34 - S Qg(tot) total gate charge ID = 15 A; VDD =16V; VGS =5V; Figure 13 - 17.6 - nC Qgs gate-source charge - 4 - nC Qgd gate-drain (Miller) charge - 4.4 - nC Ciss input capacitance VGS =0V; VDS = 16 V; f = 1 MHz; Figure 11 - 1335 - pF Coss output capacitance - 391 - pF Crss reverse transfer capacitance - 190 - pF td(on) turn-on delay time VDD =16V; RD =10 Ω; VGS = 10 V - 10.6 - ns tr rise time - 11.7 - ns td(off) turn-off delay time - 37 - ns tf fall time -19 - ns Source-drain (reverse) diode VSD source-drain (diode forward) voltage IS = 1 A; VGS =0V; Figure 12 - 0.7 1.0 V trr reverse recovery time IS = 2.3 A; dIS/dt = −100 A/µs; VGS =0V - 70 - ns |
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