SI5475DC-T1 datasheet(3/4 Pages) VISHAY

Numer części	SI5475DC-T1

Szczegółowy opis	P-Channel 12-V (D-S) MOSFET

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Si5475DC

Vishay Siliconix

Document Number: 71324

S-21251—Rev. B, 05-Aug-02

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

500

1000

1500

2000

2500

3000

02468

10

12

0.8

0.9

1.0

1.1

1.2

1.3

1.4

--50

--25

0

25

50

75

100

125

150

0

1

2

3

4

5

0

5

10

15

20

0.00

0.02

0.04

0.06

0.08

0.10

0

5

10

15

20

VDS -- Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS =6 V

ID =5.5 A

ID -- Drain Current (A)

VGS =4.5 V

ID =5.5 A

VGS =2.5 V

VGS =1.8 V

Gate Charge

On-Resistance vs. Drain Current

Qg -- Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ -- Junction Temperature (_C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.00

0.02

0.04

0.06

0.08

0.10

012345

TJ = 150_C

TJ =25_C

ID =5.5 A

20

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD -- Source-to-Drain Voltage (V)

VGS -- Gate-to-Source Voltage (V)

VGS =4.5 V

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