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IRF9530S Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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IRF9530S Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 8 page IRF9530S, SiHF9530S www.vishay.com Vishay Siliconix S16-0754-Rev. D, 02-May-16 1 Document Number: 91077 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated •P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -25 V, starting TJ = 25 °C, L = 4.2 mH, Rg = 25 , IAS = -12 A (see fig. 12). c. ISD - 12 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) -100 RDS(on) ()VGS = -10 V 0.30 Qg max. (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S G D P-Channel MOSFET D2PAK (TO-263) G D S Available Available ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF9530S-GE3 SiHF9530STRL-GE3 a SiHF9530STRR-GE3 a Lead (Pb)-free IRF9530SPbF IRF9530STRLPbF a IRF9530STRRPbF a SiHF9530S-E3 SiHF9530STL-E3 a SiHF9530STR-E3 a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID -12 A TC = 100 °C -8.2 Pulsed Drain Current a IDM -48 Linear Derating Factor 0.59 W/°C Linear Derating Factor (PCB mount) e 0.025 Single Pulse Avalanche Energy b EAS 400 mJ Avalanche Current a IAR -12 A Repetitive Avalanche Energy a EAR 8.8 mJ Maximum Power Dissipation TC = 25 °C PD 88 W Maximum Power Dissipation (PCB mount) e TA = 25 °C 3.7 Peak Diode Recovery dV/dt c dV/dt - 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C Soldering Recommendations (Peak temperature) d for 10 s 300 |
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