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SI1442DH Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI1442DH Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 12 page www.vishay.com 2 Document Number: 63772 S12-0546-Rev. A, 12-Mar-12 Vishay Siliconix Si1442DH New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical support, please contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 12 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 5 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 2.7 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 12 V, VGS = 0 V 1 µA VDS = 12 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS 5 V, VGS = 4.5 V 15 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 6 A 0.017 0.020 VGS = 2.5 V, ID = 5 A 0.019 0.024 VGS = 1.8 V, ID = 3 A 0.023 0.030 Forward Transconductancea gfs VDS = 6 V, ID = 6 A 33 S Dynamicb Input Capacitance Ciss VDS = 6 V, VGS = 0 V, f = 1 MHz 1010 pF Output Capacitance Coss 323 Reverse Transfer Capacitance Crss 305 Total Gate Charge Qg VDS = 6 V, VGS = 8 V, ID = 7 A 21.8 33 nC VDS = 6 V, VGS = 4.5 V, ID = 7 A 13.1 20 Gate-Source Charge Qgs 2 Gate-Drain Charge Qgd 2.7 Gate Resistance Rg f = 1 MHz 0.3 1.6 3.2 Turn-On Delay Time td(on) VDD = 6 V, RL = 1.07 ID 5.6 A, VGEN = 4.5 V, Rg = 1 816 ns Rise Time tr 13 20 Turn-Off Delay Time td(off) 22 33 Fall Time tf 918 Turn-On Delay Time td(on) VDD = 6 V, RL = 1.07 ID 5.6 A, VGEN = 8 V, Rg = 1 612 Rise Time tr 12 18 Turn-Off Delay Time td(off) 22 33 Fall Time tf 816 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 4 A Pulse Diode Forward Current ISM 20 Body Diode Voltage VSD IS = 5.6 A, VGS = 0 V 0.75 1.2 V Body Diode Reverse Recovery Time trr IF = 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C 19 30 ns Body Diode Reverse Recovery Charge Qrr 714 nC Reverse Recovery Fall Time ta 13 ns Reverse Recovery Rise Time tb 6 |
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