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SI2371EDS Arkusz danych(PDF) 4 Page - Vishay Siliconix |
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SI2371EDS Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 63924 S13-0633-Rev. A, 25-Mar-13 Vishay Siliconix Si2371EDS This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Charge Single Pulse Power, Junction-to-Ambient Soure-Drain Diode Forward Voltage 0 2 4 6 8 10 0 5 10 15 20 25 Q g - Total Gate Charge (nC) V DS = 24 V V DS = 8 V V DS = 15 V I D = 3.7 A 0 10 20 30 0.001 0.01 0.1 1 10 100 Time (s) 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C On-Resistance vs. Junction Temperature Threshold Voltage On-Resistance vs. Gate-to-Source Voltage 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) V GS = 10 V, 3.7 A V GS = 2.5 V, 2 A V GS = 4.5 V, 2 A A A 0.6 0.75 0.9 1.05 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA 0.000 0.030 0.060 0.090 0.120 0.150 0 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 4 A |
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