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SI5419DU Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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SI5419DU Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si5419DU Document Number: 69001 S11-0184-Rev. B, 07-Feb-11 www.vishay.com 1 P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) ()ID (A) Qg (Typ.) - 30 0.020 at VGS = - 10 V - 12a 15.5 nC 0.033 at VGS = - 4.5 V - 12a Ordering Information: Si5419DU-T1-GE3 (Lead (Pb)-free and Halogen-free) Bottom View PowerPAK ChipFET Single D D D G 1 2 8 7 6 5 D D D S 3 4 S Marking Code BF XXX Lot Traceability and Date Code Part # Code S G D P-Channel MOSFET Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 90 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 12a A TC = 70 °C - 12a TA = 25 °C - 9.9b, c TA = 70 °C - 7.9b, c Pulsed Drain Current IDM - 40 Continuous Source-Drain Diode Current TC = 25 °C IS - 12a TA = 25 °C - 2.6b, c Maximum Power Dissipation TC = 25 °C PD 31 W TC = 70 °C 20 TA = 25 °C 3.1b, c TA = 70 °C 2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t 5 s RthJA 34 40 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 34 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm profile • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch |
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Podobny opis - SI5419DU |
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