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SI7884BDP Arkusz danych(PDF) 4 Page - Vishay Siliconix |
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SI7884BDP Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 68395 S-82113-Rev. B, 08-Sep-08 Vishay Siliconix Si7884BDP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD -Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C - 0.9 - 0.6 - 0.3 0.0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID =5mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.00 0.01 0.02 0.03 012 345 67 8 910 VGS - Gate-to-Source Voltage (V) TJ =25 °C TJ = 125 °C ID =16A 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 Time (s) TA =25 °C Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 10 ms 100 ms 100 s, DC Limited byRDS(on)* BVDSS Limited 1ms 100 µs 1s 10 s |
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