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2SD1819A Arkusz danych(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SD1819A Arkusz danych(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification Silicon Epitaxial Planar Transistor 2SD1819A F043 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 7 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 μA Collector cut-off current ICEO VEB=10V,IB=0 0.1 μA DC current gain hFE VCE=10V,IC=2mA VCE=2V,IC=100mA 160 90 460 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.1 0.3 V Transition frequency fT VCB=10V, IE=-2mA, f=200MHz 150 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 3.5 pF CLASSIFICATION OF hFE Range 160-260 210-340 290-460 Marking ZQ ZR ZS TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
Podobny numer części - 2SD1819A |
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Podobny opis - 2SD1819A |
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